Power electronics covers a vast range of applications, from personal electronics to the electrification of private and public transport. Gallium nitride (GaN) and other wide bandgap materials can considerably reduce the energy losses that occur during voltage transformations. For the 100-650V range, GaN-on-silicon (GaN/Si) technologies are supplementing the current possibilities offered by silicon carbide and silicon components. They enable compact and efficient, low-cost conversion systems to be envisaged, designed to meet the wide range of society’s electrification needs.