This year, the IRT Nanoelec Scientific Committee meeting was attended by eight members. The members in attendance provided their insights in their respective fields to assess the relevance of the results obtained by IRT Nanoelec’s technology development and transfer activities.
The start of the new PowerGaN program on GaN-based power components on silicon was well-received, as were the progress and advances made by the other programs.
The members also approved of the PULSE program’s shift to digital trust.
The Scientific Committee meeting is a major annual event for IRT Nanoelec.