{"id":3982,"date":"2025-10-28T14:15:38","date_gmt":"2025-10-28T13:15:38","guid":{"rendered":"https:\/\/irtnanoelec.fr\/?post_type=evenement&#038;p=3982"},"modified":"2025-11-07T12:16:54","modified_gmt":"2025-11-07T11:16:54","slug":"3982","status":"publish","type":"evenement","link":"https:\/\/irtnanoelec.fr\/en\/evenement\/3982\/","title":{"rendered":"Croissance de III-As, Sb, P sur Si(100) 300 mm pour l\u2019int\u00e9gration dans des dispositifs nano\/opto\u00e9lectroniques"},"content":{"rendered":"    <section class=\" section-block push-edito \" id=\"block-block_fdba14b8c301c92926bc1b163d08aea1\">\n        <div class=\"container\">\n            <div class=\"flex gap-6 items-center flex-md-column-reverse flex-row-reverse\">\n                                <div class=\"bg-neutral-0 z-9 flex justify-center flex-column col-sm-12 flex-1\">\n                    <h2 class=\"heading-m neutral-800 mb-4\"><span class=\"block mb-6 h-4 w-64 bg-brand-lightest\"><\/span>Webinaire : novembre 2025<\/h2><div class=\"description\"><p>La croissance de mat\u00e9riaux III-As, III-Sb et III-P sur des plaquettes Si(100) de 300 mm ouvre la voie \u00e0 l\u2019int\u00e9gration de dispositifs nano- et opto-\u00e9lectroniques sur silicium. En combinant les propri\u00e9t\u00e9s \u00e9lectroniques et optiques des compos\u00e9s III-V avec la scalabilit\u00e9 des technologies Si, il devient possible de d\u00e9velopper des dispositifs performants pour la photonique, les technologies quantiques et l\u2019\u00e9lectronique avanc\u00e9e. Nos travaux portent sur le contr\u00f4le des d\u00e9fauts, la gestion des contraintes li\u00e9es au d\u00e9saccord de r\u00e9seau cristallin et l\u2019uniformit\u00e9 sur grande surface, afin de permettre l\u2019int\u00e9gration des III-V dans des d\u00e9monstrateurs de type \u00e9metteurs et photod\u00e9tecteurs compatibles avec les technologies micro\u00e9lectroniques avanc\u00e9es. D\u00e9veloppements men\u00e9s par le CNRS et le CEA-Leti dans le cadre du programme Photonic Sensors de l\u2019IRT Nanoelec.<\/p>\n<\/div>                        <div class=\"links-wrap mt-6 gap-4 flex flex-wrap\">\n                            <a href=\"https:\/\/www.youtube.com\/watch?v=NI99KgUBBIs\" class=\"bg-brand-default button text-white\" target=\"_blank\" rel=\"noopener\">Replay disponible<\/a>                        <\/div>\n                                    <\/div>\n                \n                   \n            <\/div>\n        <\/div>\n    <\/section>\n\n\n    <div class=\"spacer hide-md h-20\"><\/div>\n    <div class=\"spacer hide show-md h-20\"><\/div>\n\n\n    <section class=\"section-normal embed-youtube \">\n        <div class=\"container\">\n            <div class=\"wrapper-youtube-embed\">\n                <iframe loading=\"lazy\" title=\"[Webinaire] Croissance de III-As, Sb, P sur Si(100) 300 mm pour l\u2019int\u00e9gration h\u00e9t\u00e9rog\u00e8ne\" width=\"640\" height=\"360\" src=\"https:\/\/www.youtube.com\/embed\/NI99KgUBBIs?feature=oembed\" frameborder=\"0\" allow=\"accelerometer; autoplay; clipboard-write; encrypted-media; gyroscope; picture-in-picture; web-share\" referrerpolicy=\"strict-origin-when-cross-origin\" allowfullscreen><\/iframe>            <\/div>\n        <\/div>\n    <\/section>\n\n\n    <div class=\"spacer hide-md h-20\"><\/div>\n    <div class=\"spacer hide show-md h-20\"><\/div>\n\n\n    <section class=\" section-normal push-edito \" id=\"block-block_052973d73812e13e9731654fae567f8a\">\n        <div class=\"container\">\n            <div class=\"flex gap-6 items-center flex-md-column-reverse\">\n                                <div class=\"bg-neutral-0 z-9 flex justify-center flex-column col-sm-12 flex-1\">\n                    <div class=\"description\"><p>Par <a href=\"https:\/\/www.linkedin.com\/in\/thierry-baron-15329513\/\" target=\"_blank\" rel=\"noopener\">Thierry Baron<\/a>, Directeur de recherche au CNRS (<a href=\"https:\/\/ltm.univ-grenoble-alpes.fr\/\" target=\"_blank\" rel=\"noopener\">Laboratoire des technologies de la micro\u00e9lectronique : CNRS-UGA<\/a>). Webinaire pr\u00e9sent\u00e9 par <a href=\"https:\/\/www.linkedin.com\/in\/stephanie-gaugiran\/\" target=\"_blank\" rel=\"noopener\">St\u00e9phanie Gaugiran<\/a> (CEA), Directrice du programme <a href=\"https:\/\/irtnanoelec.fr\/programme\/programme-photonic-sensors\/\">Nanoelec\/Photonic Sensors<\/a><\/p>\n<\/div>                <\/div>\n                \n                   \n            <\/div>\n        <\/div>\n    <\/section>\n","protected":false},"featured_media":4217,"template":"","meta":{"_acf_changed":true,"inline_featured_image":false},"class_list":["post-3982","evenement","type-evenement","status-publish","has-post-thumbnail","hentry"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.1.1 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Croissance de III-As, Sb, P sur Si(100) 300 mm pour l\u2019int\u00e9gration dans des dispositifs nano\/opto\u00e9lectroniques - IRT Nanoelec<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/irtnanoelec.fr\/en\/evenement\/3982\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Croissance de III-As, Sb, P sur Si(100) 300 mm pour l\u2019int\u00e9gration dans des dispositifs nano\/opto\u00e9lectroniques - 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