7/10/2020 - Toward the 2nd generation of Power GaN diodes

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In lateral power diodes, the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer, an anode contact on p-GaN layer can be a source of hole injection that increases the electron density at AlGaN/GaN interface. In a paper presented at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2020, digital), CEA-Leti authors presented the study they ran in the frame of #Nanoelec.

“The role of p-GaN layer on the surge current capability explain the role of hole barrier tunneling at anode metal/p-GaN interface. We demonstrated that use of high Mg concentrations in p-GaN layer for HADs provides lower turn-on voltage owing to conductivity modulation. The findings obtained in our work can pave the way to the use of conductivity modulation to obtain surge current capability in lateral power diodes”, comments Marie-Anne Jaud (CEA-Leti), corresponding author of the paper.

G.Atmaca & al. | Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode | DOI: 10.23919/SISPAD49475.2020.9241673 | 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)